Optical Processes in Semiconductors by Jacques I. Pankove

Optical Processes in Semiconductors by Jacques I. Pankove

Author:Jacques I. Pankove
Language: eng
Format: epub
ISBN: 9780486138701
Publisher: Dover Publications
Published: 2012-07-17T16:00:00+00:00


10-D-2 TEMPERATURE DEPENDENCE OF LOSSES, OF EFFICIENCY, AND OF THRESHOLD CURRENT DENSITY

We saw in Eq. (9-14) that the threshold current density is proportional to the bulk losses α. A large portion of bulk losses is due to free-carrier absorption. Since the threshold current density increases with temperature, one can readily see that the increased carrier density will cause increased losses.

Fig. 10-9 The position of the cavity modes and of the coherent output. The open circles are the coherent lines and the dashed curve is the band gap of pure GaAs less 41.6 mV, i.e., the spontaneous emission peak: Eg − (ED + EA).340



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